 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR ISSUE 3 OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44m at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage PARTMARKING DETAIL FZT968 FZT968 C E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. -15 -12 -6 TYP. -28 -20 -8 -10 -1.0 -10 -65 -132 -360 -1050 -870 300 300 200 150 450 450 300 240 50 80 161 120 116 -130 -170 -450 -1200 -1050 1000 MAX. VALUE -15 -12 -6 -20 -6 3 -55 to +150 UNIT V V V A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-12V VCB=-12V, Tamb=100C VEB=-6V IC=-500mA, IB=-5mA* IC=-2A, IB=-50mA* IC=-6A, IB=-250mA* IC=-6A, IB=-250mA* IC=-6A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-500mA, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V nA nA mV mV mV mV mV Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 294 FZT968 TYPICAL CHARACTERISTICS 0.8 +25 C 0.8 I+/I*=50 0.6 0.4 I+/I*=250 I+/I*=200 I+/I*=100 I+/I*=50 I+/I*=10 0.6 0.4 +100 C +25 C -55 C 0.2 0 1m 10m 100m 1 10 100 0.2 0 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC 800 V+-=1V +100 C VCE(sat) v IC 1.6 1.2 I+/I*=50 -55 C +25 C +100 C 600 400 +25 C 0.8 -55 C 200 0.4 0 10m 100m 1 10 100 1m 10m 100m 1 10 100 0 1m IC - Collector Current (A) hFE v IC IC - Collector Current (A) VBE(sat) v IC 1.4 V+-=1V -55 C +25 C +100 C 100 10 0.7 1 DC 1s 100ms 10ms 1ms 100s 0 1m 10m 100m 1 10 100 0.1 0.1 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 295 |
Price & Availability of FZT968
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |